Empirical and Physical Modeling of Self-Heating in Power AlGaN/GaN HEMTs

نویسندگان

  • M. Bernardoni
  • N. Delmonte
  • R. Menozzi
چکیده

This work shows results of dynamic lumpedelement (LE) thermal modeling of power AlGaN/GaN HEMTs. A realistic 3D structure including top-side metals, GaN-Si thermal boundary resistance, die-attach, and source via hole is modeled using a finite-element (FE) tool, and the results are used to develop simplified LE dynamic thermal models. We show that the LE models can match the FE data with excellent accuracy.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Large–Signal Modeling of AlGaN/GaN HEMTs with Analytically Calculated Thermal Resistance

A large–signal model of AlGaN/GaN HEMTs grown on sapphire substrate with gate width Wg = 2 × 150 μm and gate length Lg = 250 nm is presented. The equivalent circuit model accurately describes the sub–threshold region and takes into account the self–heating effects. The thermal resistance has been calculated analytically. The DC, small–signal and large– signal behaviour are accurately described ...

متن کامل

Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

متن کامل

Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems

.......................................................................................................................................... 5 KURZZUSAMMENFASSUNG ........................................................................................................... 6 INTRODUCTION.....................................................................................................................

متن کامل

ADVANCED LARGE-SIGNAL MODELING OF GaN-HEMTs

For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a largesignal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also ...

متن کامل

Research of Electromagnetic-Thermal Coupling Mechanism Based on a Physical Model of AlGaN/GaN HEMTs

A single-finger physical model of 180 nm gatelength and 75 μm gate-width AlGaN/GaN HEMTs is described including lateral structure and vertical material parameters. The Farahmand Modified Caughey Thomas fitting function and the Monte Carlo model are used to express the 2DEG mobility in low and high field respectively. Then DC characteristics is simulated and the initial condition generated by se...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012